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PD - 94006
IRF640N IRF640NS IRF640NL
Advanced Process Technology l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description
l Fifth Generation HEXFET (R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF640NL) is available for lowprofile application.
HEXFET(R) Power MOSFET
D
VDSS = 200V RDS(on) = 0.15
G S
ID = 18A
TO-220AB IRF640N
D2Pak IRF640NS
TO-262 IRF640NL
Absolute Maximum Ratings
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
18 13 72 150 1.0 20 247 18 15 8.1 -55 to +175 300 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V mJ A mJ V/ns C
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10/09/00
IRF640N/S/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. 200 --- --- 2.0 6.8 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.25 --- --- --- --- --- --- --- --- --- --- 10 19 23 5.5 4.5 7.5 1160 185 53
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.15 VGS = 10V, ID = 11A 4.0 V VDS = VGS, ID = 250A --- S VDS = 50V, ID = 11A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 11A 11 nC VDS = 160V 33 VGS = 10V, See Fig. 6 and 13 --- VDD = 100V --- ID = 11A ns --- RG = 2.5 --- RD = 9.0, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol --- --- 18 showing the A G integral reverse 72 --- --- S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 11A, VGS = 0V --- 167 251 ns TJ = 25C, IF = 11A --- 929 1394 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount)
Typ.
--- 0.50 --- ---
Max.
1.0 --- 62 40
Units
C/W
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IRF640N/S/L
100
I D , Drain-to-Source Current (A)
10
I D , Drain-to-Source Current (A)
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
100
VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP
10
1
4.5V
4.5V
1
0.1
0.01 0.1
20s PULSE WIDTH TJ = 25 C
1 10 100
0.1 0.1
20s PULSE WIDTH TJ = 175C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
RDS(on) , Drain-to-Source On Resistance (Normalized)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
ID = 18A
I D , Drain-to-Source Current (A)
TJ = 175 C
10
TJ = 25 C
1
0.1 4.0
V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 10.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF640N/S/L
2500
2000
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = C gd Coss = Cds + Cgd
20
ID = 11A
16
V DS= 160V V DS= 100V V DS= 40V
C, Capacitance(pF)
1500
Ciss
12
1000
8
Coss
500
4
Crss
0 1 10 100 1000
0 0 20 40 60 80
VDS, Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
100
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 175 C
10
ID , Drain Current (A)
100 10us
TJ = 25 C
1
10
100us 1ms
1
10ms
0.1 0.2
V GS = 0 V
0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.1 0.1
TC = 25 C TJ = 175 C Single Pulse
1 10 100 1000
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRF640N/S/L
RD
20 20
VDS VGS D.U.T.
+ VDD
ID , Drain Current (A) ID , Drain Current (A)
16 16
RG
-
12 12
10V
Pulse Width 1 s Duty Factor 0.1 %
8
8
Fig 10a. Switching Time Test Circuit
VDS
4 4
90%
0
0 25 25
50 50
75
100
125
150
125 150 TC 75 , Case100 Temperature ( C) TC , Case Temperature ( C)
175 175
10% VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Case Temperature
10
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.001 0.01 0.1 1
0.01 0.00001
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRF640N/S/L
EAS , Single Pulse Avalanche Energy (mJ)
600
15V
500
ID 4.4A 7.6A BOTTOM 11A TOP
VDS
L
D R IV E R
400
RG
20V
D .U .T
IA S tp
+ - VD D
A
300
0 .0 1
200
Fig 12a. Unclamped Inductive Test Circuit
V (B R )D S S tp
100
0 25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
IG
ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF640N/S/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs
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IRF640N/S/L
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .87 (.11 3 ) 2 .62 (.10 3 )
10.5 4 (.4 15 ) 10.2 9 (.4 05 )
3 .78 (.14 9 ) 3 .54 (.13 9 ) -A6.4 7 (.255 ) 6.1 0 (.240 )
-B4 .69 (.1 85 ) 4 .20 (.1 65 ) 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 )
4 15 .24 (.6 00 ) 14 .84 (.5 84 )
1.1 5 (.0 45) M IN 1 2 3
L E A D A S S IG N M E NT S 1 - G A TE 2 - D R A IN 3 - SOURCE 4 - D R A IN
14 .09 (.5 55 ) 13 .47 (.5 30 )
4 .0 6 (.16 0 ) 3 .5 5 (.14 0 )
3X 1.4 0 (.0 55 ) 3X 1.1 5 (.0 45 ) 2 .5 4 (.1 00) 2X N O TE S :
0 .93 (.03 7 ) 0 .69 (.02 7 ) M BAM
3X
0.5 5 (.0 22) 0.4 6 (.0 18)
0 .3 6 (.0 1 4)
2 .92 (.11 5 ) 2 .64 (.10 4 )
1 D IM E N S IO N IN G & TO L E R A NC ING P E R A N S I Y 14 .5 M , 1 982 . 2 C O N TR O L LING D IM E N S IO N : INC H
3 O UTL IN E C O NF O R M S TO J E DE C O UT L IN E TO -22 0 A B . 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L O T C O D E 9 B 1M
A
IN T E R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER IR F 1 0 10 9 24 6 9B 1M
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
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IRF640N/S/L
D2Pak Package Outline
10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A2
4.69 (.185) 4.20 (.165)
-B1.32 (.052) 1.22 (.048)
10.16 (.400) REF.
6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) REF.
1.78 (.070) 1.27 (.050)
1
3
3X
1.40 (.055) 1.14 (.045) 3X 5.08 (.200 )
0.93 (.037) 0.69 (.027) 0.25 (.010) M BAM
0.55 (.022) 0.46 (.018)
1 .39 (.055) 1 .14 (.045)
M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50)
N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE
8.89 (.350) 17.78 (.700)
3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X
D2Pak Part Marking Information
IN TE R N A T IO N A L R E C TIF IE R LOGO ASSEMBLY LOT CODE
PART NUMBER F530S 9246 9B 1M
A
D A TE C O D E (Y Y W W ) YY = YEAR W W = W EEK
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IRF640N/S/L
TO-262 Package Outline
TO-262 Part Marking Information
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IRF640N/S/L
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1.6 0 (.06 3 ) 1.5 0 (.05 9 ) 0.3 68 (.014 5 ) 0.3 42 (.013 5 )
F E E D D IR E C T IO N 1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1 1.60 (.4 57 ) 1 1.40 (.4 49 )
1 5.42 (.6 09 ) 1 5.22 (.6 01 )
2 4.30 (.95 7) 2 3.90 (.94 1)
TR L
10.90 (.42 9) 10.70 (.42 1) 1.75 (.069 ) 1.25 (.049 ) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) 4.7 2 (.1 36 ) 4.5 2 (.1 78 )
F E E D D IR E C T IO N
13.50 (.532) 12.80 (.504)
27.40 (1.079) 23.90 (.941) 4
33 0.00 (14.173) M A X.
60.00 (2.362) M IN .
Notes: max. junction temperature.
NOTES : 1. C O M F O R M S T O EIA -418. 2. C O N T R O LLIN G D IM EN S IO N : M ILLIM ET E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .
26.40 (1.03 9) 24.40 (.961 ) 3
30.40 (1.197) M AX. 4
Repetitive rating; pulse width limited by Starting TJ = 25C, L = 4.2mH
RG = 25, IAS = 11A.
Pulse width 400s; duty cycle 2%. This is only applied to TO-220AB package
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 11A, di/dt 344A/s, VDD V(BR)DSS,
TJ 175C
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00
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